(Hong Kong)
Product Summary
The FDS8958A is a Dual N & P-Channel PowerTrench MOSFET.
Parametrics
FDS8958A absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current - Continuous: 7 A; (4)Power Dissipation for Dual Operation: 2 W; (5)Power Dissipation for Single Operation (Note 1a): 1.6W; (6)Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
FDS8958A features: (1)Fast switching speed; (2)High power and handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDS8958A |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
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FDS8958A_F085 |
Fairchild Semiconductor |
MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET |
Data Sheet |
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FDS8958A_NF073 |
Fairchild Semiconductor |
MOSFET DUAL NCH AND PCH POWER TRENCH MOSFET |
Data Sheet |
Negotiable |
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FDS8958A_Q |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
Negotiable |
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