Product Summary

The C5707 is an NPN Epitaxial Planar Silicon Transistor. The applications of the C5707 include DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.

Parametrics

C5707 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: (-50)80 V; (2)Collector-to-Emitter Voltage, VCES: (-50)80 V; (3)Collector-to-Emitter Voltage, VCEO: (-)50 V; (4)Emitter-to-Base Voltage, VEBO: (-)6 V; (5)Collector Current, IC: (-)8 A; (6)Collector Current, (Pulse) ICP: (-)11 A; (7)Base Current, IB: (-)2 A; (8)Collector Dissipation, PC: 1.0 W; Tc=25℃: 15 W; (9)Junction Temperature, Tj: 150℃; (10)Storage Temperature, Tstg: -55 to +150℃.

Features

C5707 features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation.

Diagrams

C5707 block diagram