(Hong Kong)
Product Summary
The BUH515D is a high voltage fast-switching NPN power transistor manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. The application of the BUH515D includes horizontal deflection for colour TV.
Parametrics
BUH515D absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 1500 V; (2)VCEO, Collector-Emit ter Voltage (IB = 0): 700 V; (3)VEBO, Emitter-Base Voltage (IC = 0): 5 V; (4)IC, Collector Current: 8 A; (5)ICM, Collector Peak Current (tp < 5 ms): 15 A; (6)IB, Base Current: 5 A; (7)IBM, Base Peak Current (tp < 5 ms): 8 A; (8)Ptot, Total Dissipation at Tc = 25℃: 50 W; (9)Tstg, Storage Temperature: -65 to 150℃; (10)Tj, Max. Operating Junction Temperature: 150℃.
Features
BUH515D features: (1)STMicroelectronics preferred salestype; (2)High voltage capability; (3)U.L. recognised isowatt218 package (U.L. FILE # E81734 (N)); (4)NPN transistor with integrated freewheeling diode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUH515D |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
BUH50 |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 500V 50W NPN |
Data Sheet |
Negotiable |
|
||||
 |
BUH51 |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 800V 50W NPN |
Data Sheet |
Negotiable |
|
||||
|
BUH515 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BUH515D |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BUH515FP |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BUH517 |
Other |
|
Data Sheet |
Negotiable |
|
||||
