Product Summary

The AP4511GH is an N AND P-channel enhancement mode power MOSFET. The Advanced Power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

Parametrics

AP4511GH absolute maximum ratings: (1)VDS, Drain-Source Voltage: 35 V; (2)VGS, Gate-Source Voltage: ±20 V; (3)ID@TC=25℃, Continuous Drain Current: 15A; (4)ID@TC=100℃, Continuous Drain Current: 9 A; (5)IDM, Pulsed Drain Current: 50A; (6)PD@TC=25℃, Total Power Dissipation: 10.4 W; (7)Linear Derating Factor: 0.083 W/℃; (8)TSTG, Storage Temperature Range: -55 to 150 ℃; (9)TJ, Operating Junction Temperature Range: -55 to 150 ℃.

Features

AP4511GH features: (1)Simple Drive Requirement; (2)Good Thermal Performance; (3)Fast Switching Performance.

Diagrams

AP4511GH block diagram