(Hong Kong)
Product Summary
The AP4501GM is an advanced power MOSFET from APEC which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
AP4501GM absolute maximum ratings: (1)VDS Drain-Source Voltage: N-channel: 30V; P-channel: -30 V; (2)VGS Gate-Source Voltage: N-channel: ±20V, P-channel: ±20V; (3)ID@TA=25℃ Continuous Drain Current: N-channel: 7.0A, P-channel: -5.3A; (4)ID@TA=70℃ Continuous Drain Current: N-channel: 5.8A, P-channel: -4.7A; (5)IDM Pulsed Drain Current: N-channel: 20A, P-channel: -20A; (6)PD@TA=25℃ Total Power Dissipation: 2 W; (7)Linear Derating Factor: 0.016 W/℃; (8)TSTG Storage Temperature RangE: -55 to 150 ℃; (9)TJ Operating Junction Temperature Range: -55 to 150 ℃.
Features
AP4501GM features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Fast Switching Performance.
Diagrams
