Product Summary

The AOD452 is an N-Channel Enhancement Mode Field Effect Transistor. The AOD452 uses advanced trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AOD452 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 25V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, Tc=25℃, ID: 55W; Tc=100℃, ID: 55W; (4)Pulsed Drain Current, IDM: 100A; (5)Avalanche Current, IAR: 30A; (6)Repetitive avalanche energy L=0.1mH, EAR: 135mJ; (7)Power Dissipation b, Tc=25℃, PDSM: 50W; Tc=70℃, PDSM: 25W; (8)Power Dissipation a, TA=25℃, PDSM: 3W; TA=70℃, PDSM: 2.1W; (9)Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃.

Features

AOD452 features: (1)VDS (V) =25V; (2)ID = 55 A (VGS = 10V); (3)RDS(ON) < 8.5 mΩ (VGS = 10V); (4)RDS(ON) < 14 mΩ (VGS = 4.5V).

Diagrams

AOD452 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AOD452
AOD452

MOSFET N-CH 25V 55A TO-252
Data Sheet
Negotiable 
AOD452A
AOD452A
Other

Data Sheet
Negotiable