Product Summary

The 3N50C is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The 3N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

3N50C absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 500 V; (2)ID, Drain Current - Continuous (TC = 25℃): 13 A; Continuous (TC = 100℃): 8 A; (3)IDM, Drain Current - Pulsed: 52 A; (4)VGSS, Gate-Source Voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy: 860 mJ; (6)IAR, Avalanche Current: 13 A; (7)EAR, Repetitive Avalanche Energy: 19.5 mJ; (8)dv/dt, Peak Diode Recovery, dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 195 W; Derate above 25℃: 1.56 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL; (12)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

3N50C features: (1)13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V; (2)Low gate charge (typical 43nC); (3)Low Crss (typical 20pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

3N50C block diagram