(Hong Kong)
Product Summary
The 2N7000 is a TMOS FET transistor.
Parametrics
2N7000 absolute maximum ratings: (1) Drain Source Voltage VDSS: 60V; (2) Drain-Gate Voltage ( RGS=1.0MΩ) VDGR: 60V; (3) Gate-Source Voltage-Continuous VGS: ±20V; (4) Drain Current ID: 200mA (Continuous) , IDM: 500mA(Pulsed) ; (5) Total Power Dissipation@T=25°C: 350mW, Derate above 25°C: 2.8mW/°C; (6) Operating and Storage Temperature Range: -55 to +150°C.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N7000 |
Fairchild Semiconductor |
MOSFET N-CHANNEL 60V 200mA |
Data Sheet |
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2N7000 AMO |
NXP Semiconductors |
MOSFET TRENCH 31V-99V G2 |
Data Sheet |
Negotiable |
|
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 |
2N7000,126 |
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MOSFET N-CH 60V 300MA TO-92 |
Data Sheet |
Negotiable |
|
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2N7000_D26Z_Q |
Fairchild Semiconductor |
MOSFET N-CHANNEL 60V 200mA |
Data Sheet |
Negotiable |
|
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2N7000_D74Z |
Fairchild Semiconductor |
MOSFET N-CHANNEL 60V 200mA |
Data Sheet |
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2N7000_D75Z |
Fairchild Semiconductor |
MOSFET N-CHANNEL 60V 200mA |
Data Sheet |
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2N7000_J61Z |
Fairchild Semiconductor |
MOSFET TO-92 |
Data Sheet |
Negotiable |
|
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|
2N7000_Q |
Fairchild Semiconductor |
MOSFET N-CHANNEL 60V 200mA |
Data Sheet |
Negotiable |
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