Product Summary
The 2N2219 is a silicon planar epitaxial NPN transistor in Jedec TO-39. The device is designed for high-speed switching applications at collector currents up to 500 mA, and features useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.
Parametrics
2N2219 absolute maximum ratings: (1)VCBO, Collector-base Voltage (IE =0): 60 V; (2)VCEO, Collector-emitter Voltage (IB =0): 30 V; (3)VEBO, Emitter-base Voltage (IC =0): 5 V; (4)IC, Collector Current: 0.8 A; (5)Ptot, Total Power Dissipation at Tamb ≤ 25℃: 0.8W; (6)Tstg, Storage Temperature: –65 to 200℃; (7)Tj, Junction Temperature: 175℃.
Features
2N2219 features: (1)ICBO, Collector Cutoff Current (IE =0): 10μA; (2)IEBO, Emitter Cutoff Current (IC =0): 10nA; (3)V(BR) CBO, Colllector-base Breakdown Voltage (IE =0): 60V; (4)V(BR)CEO, Collector-emitter Breakdown Voltage (IB =0): 30V; (5)V(BR) EBO, Emittter-base Breakdown Voltage (IC =0): 5V; (6)VCE (sat), Collector-emitter Saturation Voltage: 0.4V; (7)VBE (sat), Base-emitter Saturation Voltage: 1.3V.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N2219 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Ampl/Switch |
Data Sheet |
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2N2219A |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
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2N2219A-B |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 800mA 50V |
Data Sheet |
Negotiable |
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2N2219A-BP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 800mA 50V |
Data Sheet |
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2N2219AL |
Other |
Data Sheet |
Negotiable |
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