(Hong Kong)
Product Summary
The SIHG20N50C is a Power MOSFET.
Parametrics
SIHG20N50C absolute maxing ratings: (1)Drain-Source Voltage VDS: 500 V; (2)Gate-Source Voltage VGS: ±30 V; (3)Continuous Drain Current (TJ = 150 ℃) VGS at 10 V ID: 20A at TC = 25 ℃; 11A at TC = 100 ℃; (4)Pulsed Drain Current IDM: 80 A; (5)Linear Derating Factor: 1.8 W/℃; (6)Single Pulse Avalanche Energy EAS: 361 mJ; (7)Maximum Power Dissipation PD: 250 W; (8)Peak Diode Recovery dV/dt dV/dt: 5 V/ns; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 ℃; (10)Soldering Recommendations (Peak Temperature) for 10 s: 300℃.
Features
SIHG20N50C features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)Low Figure-of-Merit Ron × Qg; (3)100 % Avalanche Tested; (4)High Peak Current Capability; (5)dV/dt Ruggedness; (6)Improved Trr/Qrr; (7)Improved Gate Charge; (8)High Power Dissipations Capability; (9)Compliant to RoHS Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SIHG20N50C-E3 |
Vishay/Siliconix |
MOSFET 560V 20A 292W 270mohm @ 10V |
Data Sheet |
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MOSFET 560V 20A 292W 270mohm @ 10V |
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