Product Summary

The FCA20N60F is a high voltage MOSFET that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, the FCA20N60F is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Parametrics

FCA20N60F absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)ID Drain Current: 12.5A; (3)IDM Drain Current - Pulsed: 60 A; (4)VGSS Gate-Source voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 690 mJ; (6)IAR Avalanche Current: 20 A; (7)EAR Repetitive Avalanche Energy: 20.8 mJ; (8)dv/dt Peak Diode Recovery dv/dt: : 50 V/ns; (9)PD Power Dissipation: 208W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 °C.

Features

FCA20N60F features: (1)650V @TJ = 150°C; (2)Typ. Rds(on)=0.15Ω; (3)Fast Recovery Type ( trr = 160ns ); (4)Ultra low gate charge (typ. Qg=75nC); (5)Low effective output capacitance (typ. Coss.eff=165pF); (6)100% avalanche tested.

Diagrams

FCA20N60F plackage dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FCA20N60F
FCA20N60F
Fairchild Semiconductor
MOSFET 600V N-CH FRFET
Data Sheet
0-1: $3.86
1-25: $3.44
25-100: $2.83
100-250: $2.29
FCA20N60FS
FCA20N60FS

MOSFET N-CH 600V 20A TO-3PN
Data Sheet
0-450: $2.65