Product Summary

The FMV11N60ES is an N-channel silicon power MOSFET. It is used for Switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.


FMV11N60ES absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Continuous Drain Current ID: ±11 A; (3)Pulsed Drain Current IDP: ±44 A; (4)Gate-Source Voltage VGS: ±30 V; (5)Non-Repetitive Maximum Avalanche Energy EAS: 384 mJ; (6)Repetitive Maximum Avalanche Energy EAR: 6.5 mJ; (7)Peak Diode Recovery dV/dt: 4.9 kV/µs; (8)Peak Diode Recovery -di/dt: 100 A/µs.


FMV11N60ES features: (1)Maintains both low power loss and low noise; (2)Lower RDS(on)characteristic; (3)More controllable switching dv/dt by gate resistance; (4)Smaller VGS ringing waveform during switching; (5)Narrow band of the gate threshold voltage (3.0±0.5V); (6)High avalanche durability.


FMV11N60ES package dimensions