(Hong Kong)
Product Summary
The 2sb507 is a planar type silicon transistor.
Parametrics
2sb507 absolute maximum ratings: (1)Maximum collector power dissipation (Pc): 30W; (2)Maximum collector-base voltage (Ucb): 60V; (3)Maximum collector-emitter voltage (Uce): 60V; (4)Maximum emitter-base voltage (Ueb): 5V; (5)Maximum collector current (Ic max): 3A; (6)Maximum junction temperature (Tj): 150℃.
Features
2sb507 features: (1)ICBO: 0.1mA; (2)ICEO: 5mA; (3)IEBO: 1mA; (4)VCE: 0.4 to 1.0V; (5)VBE: 1.5V.
Diagrams
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 2SB507 |
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Data Sheet |
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| Image | Part No | Mfg | Description | |
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2SB506 |
Other |
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2SB507 |
Other |
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Negotiable |
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2SB509 |
Other |
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Data Sheet |
Negotiable |
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2SB511 |
Other |
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Data Sheet |
Negotiable |
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2SB512 |
Other |
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Data Sheet |
Negotiable |
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2SB514 |
Other |
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Data Sheet |
Negotiable |
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