Product Summary
The FDP80N06 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. The FDP80N06 is well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Parametrics
FDP80N06 absolute maximum ratings: (1)Drain to Source Voltage: 60 V; (2)VGSS Gate to Source Voltage: ±20 V; (3)ID Drain Current -Continuous (TC = 25°C): 80 A, Continuous (TC = 100°C): 65A; (4)IDM Drain Current - Pulsed: 320 A; (5)EAS Single Pulsed Avalanche Energy: 480 mJ; (6)IAR Avalanche Current: 80 A; (7)EAR Repetitive Avalanche Energy: 17.6 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25°C): 176 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175°C.
Features
FDP80N06 features: (1)RDS(on)= 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A; (2)Low gate charge(Typ. 57nC); (3)Low Crss(Typ. 145pF); (4)Fast switching; (5)Improved dv/dt capability; (6)RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDP80N06 |
Fairchild Semiconductor |
MOSFET 60V N-Channel |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDP8030L |
Fairchild Semiconductor |
MOSFET N-Ch PowerTrench Logic Level |
Data Sheet |
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FDP8030L_Q |
Fairchild Semiconductor |
MOSFET N-Ch PowerTrench Logic Level |
Data Sheet |
Negotiable |
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FDP80N06 |
Fairchild Semiconductor |
MOSFET 60V N-Channel |
Data Sheet |
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FDP8440 |
Fairchild Semiconductor |
MOSFET 40V N-Channel Power Trench |
Data Sheet |
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FDP8441 |
Fairchild Semiconductor |
MOSFET 40V N-Channel PowerTrench MOSFET |
Data Sheet |
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FDP8441_F085 |
Fairchild Semiconductor |
MOSFET 40V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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