Product Summary

The TK15A50D is a Field Effect Transistor.

Parametrics

TK15A50D absolute maximum ratings: (1)Drain-source voltage VDSS: 500 V; (2)Gate-source voltage VGSS: ±30 V; (3)Drain current Pulse (t = 1 ms): 60 A; (4)Drain power dissipation (Tc = 25°C)PD: 50 W; (5)Single pulse avalanche energy: 542 mJ; (6)Avalanche current IAR: 15 A; (7)Repetitive avalanche energy: 5.0 mJ; (8)Channel temperature Tch: 150 °C; (9)Storage temperature range Tstg: −55 to 150 °C.

Features

TK15A50D features: (1)Low drain-source ON-resistance: RDS (ON)= 0.24 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 7.0 S (typ.); (3)Low leakage current: IDSS = 10 μA (VDS = 500 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

TK15A50D package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TK15A50D(Q,M)
TK15A50D(Q,M)
Toshiba
MOSFET MOSFET N-CH 500V, 15A
Data Sheet
0-1: $2.18
1-10: $1.90
10-100: $1.33
100-250: $1.27
TK15A50D(STA4,Q,M)
TK15A50D(STA4,Q,M)
Toshiba
MOSFET N-Ch MOS 15A 500V 50W 2300pF 0.3
Data Sheet
0-1860: $0.94
1860-2000: $0.90
2000-2500: $0.90