Product Summary

The MJE1100 is a PNP low dropout transistor. The MJE1100 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1100 is fully specified in the saturation region and exhibits.

Parametrics

MJE1100 absolute maximum ratings: (1)Collector–Emitter Sustaining Voltage, VCEO: 40 Vdc; (2)Collector–Base Voltage, VCB: 50 Vdc; (3)Emitter–Base Voltage, VEB: 5.0 Vdc; (4)Collector Current — Continuous, IC: 4.0Adc; (5)Collector Current — Peak: ICM: 8.0Adc; (6)Base Current — Continuous, IB: 4.0 Adc; (7)Total Power Dissipation @ TC = 25℃, PD: 75Watts; (8)Derate above 25℃, PD 0.6W/℃; (9)Operating and Storage Temperature, TJ, Tstg: -65 to +150℃.

Features

MJE1100 features: (1)High Gain Limits Base-Drive Losses to only 1?% of Circuit Output Current; (2)Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts; (3)Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp.

Diagrams

MJE1100 block diagram