(Hong Kong)
Product Summary
The MD1802FX is a high voltage NPN power transistor. It is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The MD1802FX shows improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Parametrics
MD1802FX absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0), VCES: 1500V; (2)Collector-emitter voltage (IB = 0), VCEO: 700V; (3)Collector-base voltage (IC = 0), VEBO: 9V; (4)Collector current, IC: 10A; (5)Collector peak current (tP < 5ms), ICM: 15A; (6)Base current, IB: 5A; (7)Total dissipation at Tc = 25℃, PTOT: 57W.
Features
MD1802FX features: (1)State-of-the-art technology: Diffused collector “Enhanced generation”; (2)Stable performances versus operating temperature variation; (3)Low base-drive requirements; (4)Tight hFE range at operating collector current; (5)Fully insulated power package U.L. compliant.
Diagrams
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 MD1802FX |
STMicroelectronics |
Transistors Switching (Resistor Biased) NPN Power Transistor |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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MD1802FX |
STMicroelectronics |
Transistors Switching (Resistor Biased) NPN Power Transistor |
Data Sheet |
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MD1803DFP |
STMicroelectronics |
Transistors Switching (Resistor Biased) HI VLT NPN PWR TRANS STANDARD DEF |
Data Sheet |
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MD1803DFX |
STMicroelectronics |
Transistors Switching (Resistor Biased) HI VLT NPN PWR TRANS STANDARD DEF |
Data Sheet |
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MD1810K6-G |
Supertex |
Power Driver ICs High Speed Quad |
Data Sheet |
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MD1811 |
Other |
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Data Sheet |
Negotiable |
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MD1811K6-G |
Supertex |
Power Driver ICs High Speed Quad |
Data Sheet |
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