Product Summary

The FMV11N60E is an N-channel silicon power MOSFET. The applications of the FMV11N60E include Switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.

Parametrics

FMV11N60E absolute maximum ratings: (1)Drain-Source Voltage, VDS: 600V; VDSX: 600V; (2)Continuous Drain Current, ID: ±11A; (3)Pulsed Drain Current, IDP: ±44A; (4)Gate-Source Voltage, VGS: ±30V; (5)Repetitive and Non-Repetitive Maximum AvalancheCurrent, IAR: 11A; (6)Non-Repetitive Maximum Avalanche Energy, EAS: 384mJ; (7)Repetitive Maximum Avalanche Energy, EAR: 6.5mJ; (8)Peak Diode Recovery dV/dt, dV/dt: 4.9kV/μs; (9)Peak Diode Recovery -di/dt, -di/dt: 100A/μs; (10)Maximum Power Dissipation, PD: 2.16W; (11)Operating and Storage Temperature range, Tch: 150℃; (12)Tstg: -55 to + 150℃.

Features

FMV11N60E features: (1)Maintains both low power loss and low noise; (2)Lower RDS(on) characteristic; (3)More controllable switching dv/dt by gate resistance; (4)Smaller VGS ringing waveform during switching; (5)Narrow band of the gate threshold voltage (3.0±0.5V); (6)High avalanche durability.

Diagrams

FMV11N60E block diagram