Product Summary
The FDS9435A is a P-Channel MOSFET. The FDS9435A is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V). The applications of the FDS9435A include Power management, Load switch, Battery protection.
Parametrics
FDS9435A absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Gate-Source Voltage: ±25 V; (3)Drain Current: Continuous: -5.3 A, Pulsed: -50 A; (4)Power Dissipation for Single Operation PD: 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
FDS9435A features: (1)–5.3 A, –30 V. RDS(ON) = 50 mW @ VGS = –10 V RDS(ON) = 80 mW @ VGS = –4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
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![]() FDS9435A |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL P-CH -30V |
![]() Data Sheet |
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![]() FDS9435A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL P-CH -30V |
![]() Data Sheet |
![]() Negotiable |
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