Product Summary

The F3710S is an Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.

Parametrics

F3710S absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 57A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 40 A; (3)IDM, Pulsed Drain Current: 180A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 28 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.8 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case)℃.

Features

F3710S features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.

Diagrams

F3710S block diagram