Product Summary
The BUZ73A is a SIPMOS Power Transistor.
Parametrics
BUZ73A absolute maximum ratings: (1)Gate source voltage: ±20V; (2)Power dissipation:TC=25℃: 40W; (3)Operating temperature: -55℃ to +150℃; (4)Storage temperature: -55℃ to +150℃; (5)Thermal resistance, chip case: ≤3.1K/W; (6)Thermal resistance, chip to ambient: 75K/W; (7)Continuous drain current: TC=37℃: 5.5A; (8)Pulsed drain current: TC=25℃: 22A; (9)Avalanche current, limited by Tjmax: 7A; (10)Avalanche energy, periodic limited by Tjmax: 6.5mJ.
Features
BUZ73A features: (1)N channel; (2)Enhancement mode; (3)Avalanche-rated; (4)Logic Level.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() BUZ73A H |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
![]() Data Sheet |
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![]() BUZ73A H3046 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
![]() Data Sheet |
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![]() BUZ73AL H |
![]() Infineon Technologies |
![]() MOSFET N-Channel 200V Transistor |
![]() Data Sheet |
![]()
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![]() |
![]() BUZ73AL |
![]() Infineon Technologies |
![]() MOSFET N-CH 200V 5.5A |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BUZ73A |
![]() Infineon Technologies |
![]() MOSFET N-CH 200V 5.5A |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BUZ73A E3046 |
![]() |
![]() MOSFET N-CH 200V 5.5A TO-220 |
![]() Data Sheet |
![]() Negotiable |
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