Product Summary

The BD530 is a PNP silicon amplifier transistor.

Parametrics

BD530 absolute maximum ratings: (1)Collector emitter voltage, VCEO: 60 to 100Vdc; (2)Collector-base voltage, VCB: 60 to 100Vdc; (3)Emitter base voltage, VEB: 40Vdc; (4)Collector current continuous, IC: 20Adc; (5)Total device dissipation @ TA=25℃, PD: 1.0W; derate above 25℃, PD: 8.0mW/℃; (6)Total device dissipation @ TC=25℃, PD: 10W; derate above 25℃, PD: 80mW/℃; (7)Operating and storage junction temperature range, Tj, Tstg: -55 to 150℃.

Features

BD530 features: (1)High collector-emitter breakdown voltage, BVCEO: 100Vdc; (2)High power dissipation, PD: 10W @TC = 25℃; (3)Complements to NPN BD525, BD527, BD529.

Diagrams

BD530 block diagram