Product Summary
The AO4607 is a Complementary Enhancement Mode Field Effect Transistor. The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The AO4607 may be used in inverter and other applications. A Schottky diode is co-packaged with the N-channel FET to minimize body diode losses. The AO4607 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4607 absolute maximum ratings: (1)Drain-Source Voltage: 30V, -30V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current TA=25℃: 6.9A, -6A; TA=70℃: 5.8A, -5A; (4)Pulsed Drain Current: 30A, -30A; (5)Power Dissipation TA=25℃: 2W; TA=70℃: 1.28W; (6)Junction and Storage Temperature Range: -55℃ to 150℃.
Features
AO4607 features: (1)n-channel p-channel; (2)VDS (V) = 30V, -30V; (3)ID = 6.9A (VGS=10V), -6A (VGS=1-0V); (4)RDS(ON), RDS(ON); (5)<28mΩ (VGS=10V), <35mΩ (VGS = -10V); (6)<42mΩ (VGS=4.5V), <58mΩ (VGS =- 4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
AO4607 |
Other |
Data Sheet |
Negotiable |
|
||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
AO4600 |
Other |
Data Sheet |
Negotiable |
|
||||||
AO4601 |
Other |
Data Sheet |
Negotiable |
|
||||||
AO4604 |
Other |
Data Sheet |
Negotiable |
|
||||||
AO4606 |
Other |
Data Sheet |
Negotiable |
|
||||||
AO4607 |
Other |
Data Sheet |
Negotiable |
|
||||||
AO4609 |
Other |
Data Sheet |
Negotiable |
|