(Hong Kong)
Product Summary
The KSD526Y is an NPN epitaxial silicon transistor.
Parametrics
KSD526Y absolute maximum ratings: (1)VCBO Collector-Base Voltage: 80 V; (2)VCEO Collector-Emitter Voltage: 80 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current: 4 A; (5)IB Base Current: 0.4 A; (6)PC Collector Dissipation ( TC=25℃): 30 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 55 ~ 150 ℃.
Features
KSD526Y features: (1)ICBO Collector Cut-off Current VCB = 80V, IE = 0: 30 μA; (2)IEBO Emitter Cut-off Current VEB = 5V, IC = 0: 100 μA; (3)BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0: 80 V; (4)BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0: 5 V; (5)VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A: 0.45 to 1.5 V; (6)VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 3A: 1 to 1.5 V; (7)fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A: 3 to 8 MHz; (8)Cob Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz: 90 pF.
Diagrams
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 KSD526Y |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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KSD526YTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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