Product Summary
The 2N1711 is an NPN medium power transistor in a TO-39 metal package. The applications of the 2N1711 include DC and wideband amplifiers.
Parametrics
2N1711 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 75 V; (2)VCEO, collector-emitter voltage open base: 50 V; (3)ICM, peak collector current: 1 A; (4)Ptot, total power dissipation Tamb ≤ 25℃: 0.8 W; (5)hFE, DC current gain IC = 150 mA; VCE = 10 V: 100 to 300; (6)fT, transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz: 70MHz.
Features
2N1711 features: (1)High current (max. 500 mA); (2)Low voltage (max. 50 V).
Diagrams
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![]() 2N1711 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN General Purpose |
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![]() 2N1700 |
![]() Central Semiconductor |
![]() Transistors Bipolar (BJT) NPN SS Power |
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![]() 2N1711 |
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![]() Transistors Bipolar (BJT) NPN General Purpose |
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![]() 2N1722 |
![]() Other |
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![]() Negotiable |
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![]() 2N1724 |
![]() Other |
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![]() Negotiable |
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![]() 2N1792 |
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![]() THYRISTOR STUD 50V 70A TO-94 |
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![]() 2N1793 |
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![]() THYRISTOR STUD 100V 70A TO-94 |
![]() Data Sheet |
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