Product Summary

The 2SC2999E is an NPN Epitaxial Planar Silicon Transistor.

Parametrics

2SC2999E absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 25 V; (2)Collector-to-Emitter Voltage, VCEO: 20 V; (3)Emitter-to-Base Voltage, VEBO: 3 V; (4)Collector Current, IC: 30 mA; (5)Collector Dissipation, PC: 150 mW; (6)Junction Temperature, Tj: 125℃; (7)Storage Temperature, Tstg: -40 to +125℃.

Features

2SC2999E features: (1)FBET series; (2)Very small-sized package permitting sets to be smallsized and slim; (3)High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).

Diagrams

2SC2999E block diagram