(Hong Kong)
Product Summary
The BLF574 is a 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Parametrics
BLF574 absolute maximum ratings: (1)VDS drain-source voltage: 110 V; (2)VGS gate-source voltage: -0.5 +11 V; (3)ID drain current: 56 A; (4)Tstg storage temperature: -65 +150 ℃; (5)Tj junction temperature: 225 ℃.
Features
BLF574 features: (1)Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and aIDq of 1000 mA; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operatio(10 MHz to 500 MHz); (8)Compliant to Directive 2002/95/EC, regarding Restrictioof Hazardous Substances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BLF574 |
NXP Semiconductors |
Transistors RF MOSFET Power 500-600W, HF-500MHz |
Data Sheet |
Negotiable |
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BLF574,112 |
NXP Semiconductors |
Transistors RF MOSFET Power Trans MOSFET N-CH 110V 42A 5-Pin |
Data Sheet |
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