(Hong Kong)
Product Summary
The EV1000-4T0022G-10-01 is a HEXFET Power MOSFET.
Parametrics
EV1000-4T0022G-10-01 absolute maximum ratings: (1)ID: 27 A; (2)ID: 18 A; (3)IDM: 110 A; (4)PD: 500 W; (5)Linear Derating Factor: 4.0 W/℃; (6)VGS Gate-to-Source Voltage: 30 V; (7)dv/dt Peak Diode Recovery dv/dt: 13 V/ns; (8)TJ Operating Junction and: -55 to + 150 ℃; (9)Soldering Temperature, for 10 seconds: 300 ℃.
Features
EV1000-4T0022G-10-01 features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Enhanced Body Diode dv/dt Capability.
Diagrams
