(Hong Kong)
Product Summary
The STM8309 is a Dual Enhancement Mode Field E ffect Transistor.
Parametrics
STM8309 absolute maximum ratings: (1)Drain-S ource Voltage, VDS: 30 V; (2)Gate-S ource Voltage, VGS: ±20V; (3)Drain Current-Continuous @ TJ=25℃ -Pulsed, ID: 7A; IDM: 28A; (4)Drain-S ource Diode Forward Current, IS: 1.7A; (5)Maximum Power Dissipation, PD: 2.0W; (6)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.
Features
STM8309 features: (1)Drain-S ource Breakdown Voltage, VGS = 0V, ID = 250uA, BVDSS: 30 V; (2)Zero Gate Voltage Drain Current, VDS = 24V, VGS = 0V, IDSS: 1μA; (3)Gate-Body Leakage, VGS = 20V, VDS= 0V, IGSS: ±10 uA.
Diagrams
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 STM8309 |
Other |
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Data Sheet |
Negotiable |
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