Product Summary
These devices employ the Schottky Barrier principle in a
metal?to?silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SS24T3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 2A 40V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SS24 |
Fairchild Semiconductor |
Schottky (Diodes & Rectifiers) 2a/40V Schottky |
Data Sheet |
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SS24/1 |
DIODE SCHOTTKY 2A 40V SMB |
Data Sheet |
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SS24/1T |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
Data Sheet |
Negotiable |
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SS24/2BT |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
Data Sheet |
Negotiable |
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SS24/2CT |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
Data Sheet |
Negotiable |
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SS24/2T |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 2.0 Amp 40 Volt |
Data Sheet |
Negotiable |
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