Product Summary
These devices employ the Schottky Barrier principle in a
metal?to?silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() SS24T3G |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 2A 40V |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() SS24 |
![]() Fairchild Semiconductor |
![]() Schottky (Diodes & Rectifiers) 2a/40V Schottky |
![]() Data Sheet |
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![]() SS24/1 |
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![]() DIODE SCHOTTKY 2A 40V SMB |
![]() Data Sheet |
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![]() SS24/1T |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
![]() Data Sheet |
![]() Negotiable |
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![]() SS24/2BT |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
![]() Data Sheet |
![]() Negotiable |
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![]() SS24/2CT |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 40 Volt 2.0 Amp 75 Amp IFSM |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SS24/2T |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 2.0 Amp 40 Volt |
![]() Data Sheet |
![]() Negotiable |
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