Product Summary

The P1004BD is an N-Channel Enhancement Mode Field Effect Transistor.

Parametrics

P1004BD absolute maximum ratings: (1)Drain-Source Voltage, VDS: 40 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, TC = 25℃, ID: 55A; TC = 70℃, ID: 44A; (4)Pulsed Drain Current1, IDM: 120A; (5)Avalanche Current, IAS: 38A; (6)Avalanche Energy 2, L = 0.1mH, EAS: 73 mJ; (7)Power Dissipation, TC = 25℃ 50W; TC = 70℃, PD: 32W; (8)Junction & Storage Temperature Range, TJ, Tstg: -55 to 150℃.

Features

P1004BD features: (1)Drain-Source Breakdown Voltage, V(BR)DSS: VGS = 0V, ID = 250μA: 40V; (2)Gate Threshold Voltage, VGS(th): VDS = VGS, ID = 250μA: 1.7 to 3.0V; (3)Gate-Body Leakage, IGSS: VDS = 0V, VGS = ±20V: ±100 nA; (4)Zero Gate Voltage Drain Current, VDS = 32V, VGS = 0V, IDSS: 1μA; IDSS: VDS = 30V, VGS = 0V, TJ = 55℃: 10μA.

Diagrams

P1004BD block diagram