Product Summary

The IXKC20N60C is a CoolMOS Power MOSFET. The applications of the IXKC20N60C include Switched Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), Welding, Inductive Heating.

Parametrics

IXKC20N60C absolute maximum ratings: (1)VDSS, TJ = 25℃ to 150℃: 600 V; (2)VGS, Continuous: ±20 V; (3)ID25, TC = 25℃; Note 1: 14 A; (4)ID90, TC = 90℃, Note 1: 10 A; (5)ID(RMS), Package lead current limit: 45 A; (6)EAS, Io = 10A, TC = 25℃: 690 mJ; (7)EAR, Io = 20A: 1 mJ; (8)PD, TC = 25℃: 125 W; (9)TJ: -55 to +150℃; (10)TJM: 150℃; (11)Tstg: -55 to +125℃; (12)TL, 1.6 mm (0.062 in.) from case for 10 s: 300℃; (13)VISOL, RMS leads-to-tab, 50/60 Hz, t = 1 minute: 2500 V~; (14)FC, Mounting force: 11 to 65 / 2.4 to 11 N/lb.

Features

IXKC20N60C features: (1)Silicon chip on Direct-Copper-Bond substrate, High power dissipation, Isolated mounting surface, 2500V electrical isolation; (2)3RD generation CoolMOS power MOSFET, High blocking capability; Low on resistance; Avalanche rated for unclamped inductive switching (UIS); (3)Low thermal resistance due to reduced chip thickness; (4)Low drain to tab capacitance(<30pF).

Diagrams

IXKC20N60C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXKC20N60C
IXKC20N60C

Ixys

MOSFET 14 Amps 600V 0.19 Rds

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXKC13N80C
IXKC13N80C

Ixys

MOSFET 13 Amps 800V 0.29 Rds

Data Sheet

Negotiable 
IXKC15N60C5
IXKC15N60C5

Ixys

MOSFET 15 Amps 600V 0.165 Rds

Data Sheet

Negotiable 
IXKC19N60C5
IXKC19N60C5

Ixys

MOSFET 19 Amps 600V 0.125 Rds

Data Sheet

Negotiable 
IXKC20N60C
IXKC20N60C

Ixys

MOSFET 14 Amps 600V 0.19 Rds

Data Sheet

Negotiable 
IXKC23N60C5
IXKC23N60C5

Ixys

MOSFET 23 Amps 600V 0.1 Rds

Data Sheet

Negotiable 
IXKC25N80C
IXKC25N80C

Ixys

MOSFET 25 Amps 800V 0.15 Rds

Data Sheet

Negotiable