IRS2530DPBF

Product Summary

The IRS2530DPBF is a DIM8TM DIMMING BALLAST CONTROL IC. The IRS2530DPBF takes full advantage of IR’s patented ballast and high-voltage technologies to realize a simple, high-performance dimming ballast solution. A single high-voltage pin of the IRS2530DPBF senses the half-bridge current and voltage to perform necessary ballast protection functions. The DC dim input voltage reference and the AC lamp current feedback have been coupled together allowing a single pin to be used for dimming. Combining these high-voltage control algorithms of the IRS2530DPBF together with a simple dimming method in a single 8-pin IC results in a large reduction in component count, an increase in manufacturability and reliability, a reduced design cycle time, while maintaining high dimming ballast system performance. The applications of the IRS2530DPBF include Linear dimming ballast (down to 10%), 3-way dimming ballast, Multi-level switch dimming ballast.

Parametrics

IRS2530DPBF absolute maximum ratings: (1)VB, High-Side Floating Supply Voltage: -0.3 to 625 V; (2)VS, High-Side Floating Supply Offset Voltage: VB-25 to VB+0.3 V; (3)VHO, High-Side Floating Output Voltage: VS-0.3 to VB+0.3 V; (4)VLO, Low-Side Output Voltage: -0.3 to VCC+0.3 V; (5)VVCO, VCO Input Voltage: -0.3 to 6 V; (6)VDIM, DIM Input Voltage: -0.3 to VCC+0.3 V; (7)ICC, Supply Current: 20 mA; (8)IOMAX, Maximum allowable current at LO, HO and PFC due to external power transistor Miller effect: -500 to 500 mA; (9)dVS/dt, Allowable VS Pin Voltage Slew Rate: -50 to 50 V/ns; (10)PD, Maximum Power Dissipation @ TA ≤ +25 ℃, 8-Pin DIP: 1.0 W; (11)PD, Maximum Power Dissipation @ TA ≤ +25oC, 8-Pin SOIC: 0.625 W; (12)RθJA, Thermal Resistance, Junction to Ambient, 8-Pin DIP: 85 ℃/W; (13)RθJA, Thermal Resistance, Junction to Ambient, 8-Pin SOIC: 128 ℃/W; (14)TJ, Junction Temperature: -55 to 150 ℃; (15)TS, Storage Temperature: -55 to 150 ℃; (16)TL, Lead Temperature (Soldering, 10 seconds): 300 ℃.

Features

IRS2530DPBF features: (1)Dimming ballast control plus half-bridge driver; (2)Closed-loop lamp current dimming control; (3)Internal non-ZVS protection; (4)Internal crest factor protection; (5)Programmable preheat time; (6)Fixed dead-time (2.0μs typ.); (7)Lamp insert auto-restart; (8)Internal bootstrap MOSFET; (9)Internal 15.6V zener clamp diode on Vcc; (10)Micropower startup (250μA); (11)Latch immunity and ESD protection; (12)Single chip dimming solution; (13)Simple lamp current dimming control method; (14)Single lamp current sensing resistor required; (15)No half-bridge current-sensing resistor required; (16)No external protection circuits required (fully internal); (17)Flash-free lamp start at all dimming levels; (18)Large reduction in component count; (19)Easy to use for fast design cycle time; (20)Increased manufacturability and reliability.

Diagrams