Product Summary

The HMC311LP3E is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifier. This 3x3mm QFN packaged amplii er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The applications of the HMC311LP3E include Cellular / PCS / 3G, Fixed Wireless & WLAN, CATV & Cable Modem, Microwave Radio.

Parametrics

HMC311LP3E absolute maximum ratings: (1)Collector Bias Voltage (Vcc): +7V; (2)RF Input Power (RFIN)(Vs = +5V): +10 dBm; (3)Junction Temperature: 150℃; (4)Continuous Pdiss (T = 85℃) (derate 5.21 mW/℃ above 85℃): 0.339 W; (5)Thermal Resistance (junction to ground paddle): 192℃/W; (6)Storage Temperature: -65 to +150℃; (7)Operating Temperature: -40 to +85℃.

Features

HMC311LP3E features: (1)P1dB Output Power: +15.5 dBm; (2)Output IP3: +32 dBm; (3)Gain: 14.5 dB; (4)50 Ohm I/O’s; (5)16 Lead 3x3mm SMT Package: 9mm2.

Diagrams

HMC311LP3E block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HMC311LP3E
HMC311LP3E

IC GAIN BLOCK AMP 16QFN
Data Sheet
0-1: $5.16
1-10: $4.64
10-25: $4.22
25-100: $3.82
100-250: $3.50
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