Product Summary
The 2SK3316 is a Silicon N Channel MOS Type Switching Regulator.
Parametrics
2SK3316 absolute maximum ratings: (1)Drain.source voltage, VDSS: 500 V; (2)Drain.gate voltage (RGS = 20 kΩ), VDGR: 500 V; (3)Gate.source voltage, VGSS: ±30 V; (4)Drain current, DC (Note 1), ID: 5 A; Pulse (Note 1), IDP: 20 A; (5)Drain power dissipation (Tc = 25℃), PD: 35 W; (6)Single pulse avalanche energy (Note 2), EAS: 180 mJ; (7)Avalanche current, IAR: 5 A; (8)Repetitive avalanche energy (Note 3), EAR: 3.5 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
2SK3316 features: (1)Fast reverse recovery time: trr = 60 ns (typ.); (2)Built.in high.speed free.wheeling diode; (3)Low drain.source ON resistance: RDS (ON) = 1.6 Ω (typ.); (4)High forward transfer admittance: |Yfs| = 3.8 S (typ.); (5)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (6)Enhancement.mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
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2SK3316 |
Other |
Data Sheet |
Negotiable |
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2SK3001 |
Other |
Data Sheet |
Negotiable |
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2SK3009 |
Other |
Data Sheet |
Negotiable |
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2SK3012 |
Other |
Data Sheet |
Negotiable |
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2SK3013 |
Other |
Data Sheet |
Negotiable |
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2SK3017 |
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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