Product Summary

The 2N336A is an NPN Silicon Diffused Transistor intended for amplifier applications in the audio and RF range and for general purpose switching applications. The 2N336A is highly stable and its variation in gain with current and temperature is less than with grown junction types.

Parametrics

2N336A absolute maximum ratings: (1)maximum dissipation-free air: 500mW; (2)Maximum operating and/or storage temperature: -65 to +200℃.

Features

2N336A features: (1)BVCBO, IC=50μA, IE=0: 45V; (2)BVCEO, IC=1MA, IB=0: 45V; (3)BVEBO, IC=100μA, Ic=0: 1V; (4)ICBO, VCB=30V, IE=0: 2μA; (5)ICBO, VCB=5V, IE=0, T=150℃: 50μA; (6)ICBO, VCB=30V, IE=0, T=150℃: 20μA.

Diagrams

2N336A block diagram