Product Summary

The TK6A65D is a Switching Regulator. The applications of the TK6A65D include Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.), High forward transfer admittance: Yfs =4.0 S (typ.), Low leakage current: IDSS = 10 μA (max) (VDS = 650 V), Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

Parametrics

TK6A65D absolute maximum ratings: (1)Drain-source voltage, VDSS: 650 V; (2)Gate-source voltage, VGSS: ±30 V; (3)Drain current, ID: 6 A; (4)Drain power dissipation (Tc = 25 ℃), PD: 45 W; (5)Single pulse avalanche energy, EAS: 281 mJ; (6)Avalanche current, IAR: 6 A; (7)Repetitive avalanche energy (Note 3), EAR: 4.5 mJ; (8)Channel temperature, Tch: 150 ℃; (9)Storage temperature range, Tstg: -55 to 150 ℃.

Features

TK6A65D features: (1)Gate leakage current, IGSS: ±1 μA; (2)Drain cut-off current, IDSS: 10 μA; (3)Drain-source breakdown voltage, V (BR) DSS: 650 V; (4)Gate threshold voltage, Vth: 2.0 to 4.0 V; (5)Drain-source ON resistance, RDS (ON): 0.95 to 1.11 Ω; (6)Forward transfer admittance, Yfs: 1.0 to 4.0 S; (7)Input capacitance, Ciss: 1050 PF; (8)Reverse transfer capacitance, Crss: 5 PF; (9)Output capacitance, Coss: 100 pF; (10)Switching time, TR: 25 ns; (11)Total gate charge, Qg: 20 nC; (12)Gate-source charge, Qgs: 13 nC; (13)Gate-drain charge, Qgd: 7 nC.

Diagrams

TK6A65D block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TK6A65D(Q)
TK6A65D(Q)
Toshiba
MOSFET N-ch 650V 6A TO-220SIS
Data Sheet
Negotiable 
TK6A65D(STA4,Q,M)
TK6A65D(STA4,Q,M)
Toshiba
MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
Data Sheet
0-1: $1.31
1-10: $1.13
10-100: $1.01
100-250: $0.94