(Hong Kong)
Product Summary
The SFP50N06 Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. The SFP50N06 Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
Parametrics
SFP50N06 absolute maximum ratings: (1)Drain to Source Voltage: 60 V; (2)Continuous Drain Current(@TC = 25°C): 50 A; (3)Continuous Drain Current(@TC = 100°C): 35.2 A; (4)IDM Drain Current Pulsed: 200 A; (5)VGS Gate to Source Voltage: ±20 V; (6)EAS Single Pulsed Avalanche Energy: 470 mJ; (7)EAR Repetitive Avalanche Energy: 13 mJ; (8)IAR Avalnche Current: 50 A; (9)dv/dt Peak Diode Recovery dv/dt: 7 V/ns; (10)Total Power Dissipation(@TC = 25 °C): 130 W; (11)Derating Factor above 25 °C: 0.87 W/°C; (12)TSTG, TJ Operating Junction Temperature & Storage Temperature: - 55 ~ 175 °C; (13)Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. : 300 °C.
Features
SFP50N06 features: (1)Low RDS(on)(0.023 Ω )@VGS=10V; (2)Low Gate Charge (Typical 39nC); (3)Low Crss (Typical 110pF); (4)Improved dv/dt Capability; (5)100% Avalanche Tested; (6)Maximum Junction Temperature Range (175°C).
Diagrams
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Data Sheet |
Negotiable |
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