Product Summary

The P2804BVG is an N-Channel Logic Level Enhancement Mode Field Effect Transistor.

Parametrics

P2804BVG absolute maximum ratings: (1)Drain-Source Voltage: 40V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Pulsed Drain Current a IDM: 20 A; (4)Continuous Drain Current: 7.5A; (5)Continuous Drain Current: 6.5A; (6)Maximum Power Dissipation TC = 25 °C PD: 25 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55°C to + 175 °C; (8)Soldering Recommendations (Peak Temperature)d for 10 s: 275 °C.

Features

P2804BVG features: (1)V(BR)DSS: 40V; (2)RDS(ON): 28mΩ; (3)ID: 7.5A.

Diagrams

P2804BVG plackage dimensions