Product Summary
The FDP33N25 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDP33N25 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDP33N25 absolute maximum ratings: (1)Drain to Source Voltage: 250 V; (2)VGSS Gate to Source Voltage: ±30 V; (3)ID Drain Current -Continuous (TC = 25°C): 33 A, Continuous (TC = 100°C): 20.4A; (4)IDM Drain Current - Pulsed: 132 A; (5)EAS Single Pulsed Avalanche Energy: 918 mJ; (6)IAR Avalanche Current: 33 A; (7)EAR Repetitive Avalanche Energy: 23.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25°C): 235 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150°C.
Features
FDP33N25 features: (1)33A, 250V, RDS(on)= 0.094Ω @VGS = 10 V; (2)Low gate charge ( typical 36.8 nC); (3)Low Crss ( typical 39 pF); (4)Fast switching; (5)Improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDP33N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel MOSFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDP3205 |
Fairchild Semiconductor |
MOSFET 55V N-Channel PowerTrench |
Data Sheet |
Negotiable |
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FDP33N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel MOSFET |
Data Sheet |
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FDP3632 |
Fairchild Semiconductor |
MOSFET 100V 80a .9 Ohms/VGS=1V |
Data Sheet |
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FDP3632_Q |
Fairchild Semiconductor |
MOSFET 100V 80a .9 Ohms/VGS=1V |
Data Sheet |
Negotiable |
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FDP3651U |
Fairchild Semiconductor |
MOSFET 100V 80A 15 OHM NCH POWER TREN |
Data Sheet |
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FDP3652 |
Fairchild Semiconductor |
MOSFET 100V 61a 0.016 Ohm |
Data Sheet |
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