Product Summary

The FDP33N25 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDP33N25 is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

FDP33N25 absolute maximum ratings: (1)Drain to Source Voltage: 250 V; (2)VGSS Gate to Source Voltage: ±30 V; (3)ID Drain Current -Continuous (TC = 25°C): 33 A, Continuous (TC = 100°C): 20.4A; (4)IDM Drain Current - Pulsed: 132 A; (5)EAS Single Pulsed Avalanche Energy: 918 mJ; (6)IAR Avalanche Current: 33 A; (7)EAR Repetitive Avalanche Energy: 23.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25°C): 235 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150°C.

Features

FDP33N25 features: (1)33A, 250V, RDS(on)= 0.094Ω @VGS = 10 V; (2)Low gate charge ( typical 36.8 nC); (3)Low Crss ( typical 39 pF); (4)Fast switching; (5)Improved dv/dt capability.

Diagrams

FDP33N25 plackage dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDP33N25
FDP33N25

Fairchild Semiconductor

MOSFET 250V N-Channel MOSFET

Data Sheet

0-1: $0.91
1-25: $0.82
25-100: $0.73
100-250: $0.65
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(USD)
Quantity
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Data Sheet

0-1: $0.91
1-25: $0.82
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Data Sheet

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Data Sheet

0-1: $1.67
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