Product Summary

The 2SD1624T-TD-E is a PNP/NPN epitaxial planar silicon transistor.

Parametrics

2SD1624T-TD-E absolute maximum ratings: (1)collector to base voltage: 60 V; (2)collector to emitter voltage: 50 V; (3)emitter to base voltage: 6 V; (4)collector current: 3 A; (5)collector current (pulse): 6 A; (6)collector dissipation: 500 mW; (7)junction temperature: 150℃; (8)storage temperature: -55 to +150℃.

Features

2SD1624T-TD-E features: (1)adoption of FBIT, MBIT processes; (2)low collector-to-emitter saturation voltage; (3)fast switching speed; (4)large current capacity and wide ASO.

Diagrams

2SD1624T-TD-E package dimensions

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2SD1624T-TD-E
2SD1624T-TD-E


TRANS NPN BIPOLAR PCP

Data Sheet

0-3000: $0.12
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