Product Summary
The 2SD1624T-TD-E is a PNP/NPN epitaxial planar silicon transistor.
Parametrics
2SD1624T-TD-E absolute maximum ratings: (1)collector to base voltage: 60 V; (2)collector to emitter voltage: 50 V; (3)emitter to base voltage: 6 V; (4)collector current: 3 A; (5)collector current (pulse): 6 A; (6)collector dissipation: 500 mW; (7)junction temperature: 150℃; (8)storage temperature: -55 to +150℃.
Features
2SD1624T-TD-E features: (1)adoption of FBIT, MBIT processes; (2)low collector-to-emitter saturation voltage; (3)fast switching speed; (4)large current capacity and wide ASO.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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2SD1624T-TD-E |
TRANS NPN BIPOLAR PCP |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
2SD1000 |
Other |
Data Sheet |
Negotiable |
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2SD1001 |
Other |
Data Sheet |
Negotiable |
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2SD1005 |
Other |
Data Sheet |
Negotiable |
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2SD1005-BV |
Other |
Data Sheet |
Negotiable |
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2SD1006 |
Other |
Data Sheet |
Negotiable |
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2SD1007 |
Other |
Data Sheet |
Negotiable |
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